Semiconductor History

  Cosem (CSF) created a manufacturing facility in St Egreve (Grenoble) in 1950. By 1964 it was producing many millions of diodes and transistors per year, employing 1500 people. In 1969 the French Government merged Cosem (CSF) with Sesco (Thomson). Thomson was another French semiconductor manufacturer, established in the early 1960s to manufacture transistors.  In time Thomson-CSF's microelectronics interests would merge with Italian SGS to form SGS Thomson, later ST Microelectronics. The St Egreve facility still exists as Teledyne e2v, however the fab is no longer there, having ceased wafer production when it was Atmel. 

  In 1965 the joint venture between Hughes Aircraft and EMI in the UK was named EMIHUS. EMIHUS manufactured a wide range of electronic components in Glenrothes, Fife including semiconductors, passives and connectors. They also performed subcontract manufacturing, including for calculators. In 1975 the name was changed to Hughes Microelectronics. Shown above is an analog ASIC designed in the UK for the company Pye TMC. Telephone Manufacturing Company (TMC) was acquired by Pye Ltd in the 1960s and produced various equipment for the GPO, including telephones. The ASIC function is likely to be a DTMF dialler chip, designed in the 1980s, but still in production in 1990. Hughes in the UK manufactured diodes and transistors starting in 1960. They transitioned to MOS in 1967, and to CMOS sometime later. Amongst its many achievements was the production of the first non volatile memories, invented in Hughes Newport Beach by Eli Harari.

The Unijunction Transistor was developed at General Electric in the early 1950s, and became a widely used semiconductor device. It was a three terminal device with one emitter and two base contacts, originally using a germanium grown 'bar' with two diffused base regions. Before the development of the first timer IC it was used in a range of timing circuits. It was also used in sensing circuits, phase control and SCR trigger applications. It was the latter which benefitted GE the most. GE produced the first Silicon Controlled Rectifiers in the late 50s which drove their pre-eminence in power electronics.  

Western Electric opened a small office in London in 1883. In 1925 the International Western Electric Company was bought by the International Telephone and Telegraph Company (ITT) and later became Standard Telephones and Cables Ltd (STC). STC used the brand name “STANDARD” for their valves/tubes, and from 1934 “BRIMAR”. The Brimar valve and cathode ray tube division was sold to Thorn Electrical Industries Ltd in 1960, and in 1961 there was a JV created between Thorn and Associated Electrical Industries (AEI) for the development and sale of valves, CRTs and semiconductors. According to the CV list, Thorn-AEI manufactured at Footscray, Kent, which became a large IC development and manufacturing site for STC up until its closure in 1993. However for Thorn-AEI (Brimar) it mentions manufacture at Rochester, Kent. So manufacturing could have taken place there as well.  Germanium pnp, very high Gain=212, Vf=149mV

    GEC first developed transistor devices at their research facility in Wembley, then transferred production to the GEC Radio Works in Coventry, where a point contact diode line had been established.  In 1956 GEC established a dedicated semiconductor manufacturing facility at School St, Hazel Grove (Greater Manchester). In 1962 GEC merged their semiconductor business with Mullard into a business called ASM (Associated Semiconductor Manufacturers), creating the UK's dominant semiconductor company of the 1960s. Mullard (Philips) owned 2/3 of the company. GEC devices were subsequently marketed as Mullard. GEC sold most of their share in 1968. Nexperia, formerly NXP (and Philips) still have an operating semiconductor facility in Hazel Grove. Decent gain and germanium, hfe=70, Vf=120mV  

Raytheon (Light from the Gods) started in the 1920s and quickly became a major player in tube (valve) based early electronics. By 1938 they were producing miniature and sub-miniature tubes, including for early hearing aids. They subsequently became an early adopter of semiconductors, including the first commercially available transistor in 1948 (CK703). A very early licensee of Bell Labs' point contact transistor, and very quick off the mark. Raytheon continued to produce tubes for many years.  This is a low noise sub-miniature triode, introduced in 1962 that can be used as a microphone input amplifier. It looks to be designed for avionics applications, given its focus on reliability.  

The Siemens brothers were industrialists from the mid 19th century, Siemens & Halske being one arm of several. At some point post WWII, the remaining entities merged into Siemens AG.  The patent shown in the image was filed in Germany in 1956 and in the US one year later. At the time the dominant transistor manufacturing technology was alloy junction. The method described in the patent was an early adoption of diffusion for creating the process layers with masking and etching, similar to the mesa transistor structure which emerged a little later in the US. Depositing metal instead of attaching gold wires, embedding the diffused layers and a protective layer on the surface would be the basis of the planar process subsequently invented by Fairchild.  Siemens first established transistor manufacturing in their electron tube facility in Munich in 1952.

Telefunken in Germany had been producing semiconductor rectifiers for a number of years before they developed transistors for mass production. Launched in 1953, the OC601 and OC602 were alloy junction germanium pnp transistors. Telefunken also developed S (special) versions which had attached copper heatsinks. These work but are low gain.  hfe=26, Vf=97mV. hfe=18, Vf=100mV.

Small changes having a big impact. Introduced in 1960, Philco had by then improved their etching process to create the thin base layer of their germanium alloy junction transistors. They then replaced the indium electrodes making the emitter and collector junctions with cadmium, giving better thermal dissipation. Due to its speed and thermal performance, it became widely used in computers of the time. These were manufactured by Philco (later Philco-Ford) at their factory in Spring City, PA. One AI processor chip now has more transistors than the first 25 years at least of the semiconductor industry!  It works, hfe (gain) is 96, Vf=273mV (so germanium).

Inside the Boss HA-5 headphone guitar amplifier from 1983. It had built in chorus and delay effects. The chorus came from the Boss CE-3 guitar pedal and used the Matsushita/Panasonic MN3207 Bucket Brigade Device and the accompanying MN3102 clock generator chip. The NEC IC on the left is an analog compander device i.e. it compresses and expands the input audio signal. The Bucket Brigade concept, developed by Philips Research Labs, had a series of on-chip capacitors between which charges moved in sequence, based on an external clock cycle. It was a precursor to the Charge Coupled Device (CCD) that was developed as the first significant semiconductor image sensor.

Raytheon sold its semiconductor operations in Mountain View CA to Fairchild in 1997. Fairchild was then a re-incarnation, not the original Silicon Valley pioneer. Raytheon had originally purchased Mountain View's Rheem in 1959, two years after it had spun out from Fairchild, led by Ed Baldwin who had moved from Hughes Semiconductors to Fairchild. Raytheon was expanding its transistor manufacturing into California through the acquisition. Like many companies, Raytheon expanded into bipolar and MOS circuits. Cyrus Madavi, who led Burr-Brown through to acquisition by TI came from Raytheon. I worked for Hughes, Raytheon and Burr-Brown.

In 1962 Mullard (Philips) and GEC pooled their resources and facilities to create Associated Semiconductor Manufacturers. Mullard owned 2/3 of the combined business. GEC pulled out in 1969. This is a small signal diode CV7364/AAZ12, germanium, Vf=258mV.

Inside two RCA alloy junction transistors from the 1950s. The smaller one is a 40V/50mA pnp and the larger is a 40V/250mA, hence the thicker wires for lower loss at the higher current. The metal connecting the base is also larger to provide better heat dissipation. The base is a thin cut slice of pure n-type germanium which has indium pellets alloyed to each side creating the pnp junctions.  There was viscous white goo inside the cases which was difficult to remove.

TI introduced the 900 series silicon transistors in 1954 but they continued to produce germanium transistors. The germanium grown junction 2N172 was introduced in 1956, adding to their transistor portfolio for radios. TI and IDEA introduced the first all transistor radio (Regency TR-1) in 1954. TI started transistor development in Lemmon Avenue in Dallas and in 1958 moved to a 300 acre site at North Central Expressway. The Semiconductor building was the first building on the campus. The building is still there (although modified) and is now a Raytheon building following the acquisition of TI's defense business in 1997.  Working transistor, hfe=23, Vf=183mV, fairly low gain.

Germanium transistors from 1955. In the early 1950s Sylvania established transistor and diode manufacturing at their tube (valve) facility in Emporium PA. Manufacturing was transferred to the Electronics Divsions in Woburn Mass. In 1957 it was divided into two new organizations, the Semiconductor Division and Special Tube Operations. Skyworks, one of the current world leaders in RF components for smartphones has its roots in Sylvania, Woburn.

The 2N109 was the first widely used 'hobbyist' RCA transistor and was used in AM receiver and preamplifier circuits. RCA originally established transistor development and manufacturing at Harrison NJ, then built a dedicated solid state operation at Somerville NJ in 1955.

Back in the day I knew about DSD (Direct Stream Digital) and SACD (Super Audio CD) but it passed me by. I was still in Burr-Brown when DSD data converter ICs were first being developed by the design team in Japan, and I'm sure I was present when they were being presented at seminars to customers, but at the time I had little or no interest in diving in personally. Burr-Brown invested heavily in designing ICs for the upcoming market demand, but as history tells us, it didn't become mainstream. Certainly not in the US, less so in Europe, but in Japan there was always demand. Philips and Sony originally developed SACD as the high end next generation of CD, and certainly the format was capable of encoding a significantly higher level of audio information on the platform. DSD was a delta-sigma bitstream format that sampled 1-bit at 2.8MHz. Philips Semiconductors (amongst others) developed an SACD processor and Burr-Brown (amongst others) developed DSD Digital to Analog converters. L...

The photo above shows a hybrid technology 12-bit D/A Converter from Burr-Brown Corporation. By 1986 this was replaced by a monolithic i.e. single chip design. Under the metal lid is a ceramic substrate based multi-chip module. See below for examples of the technology. DAC85 is the model number. The 1st C is the operating temp range (0 to 70C). CBI is complementary bipolar inputs and V is the voltage output version. 12-bit DACs from Burr-Brown were used primarily in industrial applications like automation and factory control. If you only know DACs for digital audio, then 12 bit may seem a low resolution, but parameters that were most important for high end industrial use would not be relevant for audio. These DACs were very precise.

Burr-Brown Research Corporation introduced the first solid state modular op amp in 1962. It was a circuit board based device with discrete transistors, resistors, capacitors etc in a fully tested potted module. The 1510 example potted module op amp in the image is date coded 1971.  Fairchild Semiconductor had introduced monolithic bipolar op amps in the 1960s but they were low performance.  There was no ability to trim parameters on-chip, but within the Burr-Brown modules it was possible.  It wasn't until the likes of Burr-Brown and Precision Monolithics developed on-chip thin film laser trimming that precision analog ICs were introduced. The Burr-Brown OPA134 OpAmp on top for size comparison is from 1996.

This is a Raytheon Germanium Alloy Junction transistor from the very early 1950s. The CK718 was the first transistor manufactured in large quantities for commercial applications.  The socket is for a mini vacuum tube. Raytheon replaced tubes with transistors in hearing aids, one of the first applications for solid state transistors. Raytheon was quick off the mark in the early development of transistors and were first to market with the CK703 point contact transistor in 1948. The CK722 alloy junction transistor was the first widely available transistor and opened up the technology to hobbyists. CK722s were originally lower grade CK718 test rejects. In the background is part of the original Bell Labs internal voting form for the name of the new device they had invented. This is a high gain device, Hfe=176, Vf=189mV.