Semiconductor History

Raytheon sold its semiconductor operations in Mountain View CA to Fairchild in 1997. Fairchild was then a re-incarnation, not the original Silicon Valley pioneer. Raytheon had originally purchased Mountain View's Rheem in 1959, two years after it had spun out from Fairchild, led by Ed Baldwin who had moved from Hughes Semiconductors to Fairchild. Raytheon was expanding its transistor manufacturing into California through the acquisition. Like many companies, Raytheon expanded into bipolar and MOS circuits. Cyrus Madavi, who led Burr-Brown through to acquisition by TI came from Raytheon. I worked for Hughes, Raytheon and Burr-Brown.

In 1962 Mullard (Philips) and GEC pooled their resources and facilities to create Associated Semiconductor Manufacturers. Mullard owned 2/3 of the combined business. GEC pulled out in 1969. This is a small signal diode CV7364/AAZ12, germanium, Vf=258mV.

Inside two RCA alloy junction transistors from the 1950s. The smaller one is a 40V/50mA pnp and the larger is a 40V/250mA, hence the thicker wires for lower loss at the higher current. The metal connecting the base is also larger to provide better heat dissipation. The base is a thin cut slice of pure n-type germanium which has indium pellets alloyed to each side creating the pnp junctions.  There was viscous white goo inside the cases which was difficult to remove.

TI introduced the 900 series silicon transistors in 1954 but they continued to produce germanium transistors. The germanium grown junction 2N172 was introduced in 1956, adding to their transistor portfolio for radios. TI and IDEA introduced the first all transistor radio (Regency TR-1) in 1954. TI started transistor development in Lemmon Avenue in Dallas and in 1958 moved to a 300 acre site at North Central Expressway. The Semiconductor building was the first building on the campus. The building is still there (although modified) and is now a Raytheon building following the acquisition of TI's defense business in 1997.  Working transistor, hfe=23, Vf=183mV, fairly low gain.

Germanium transistors from 1955. In the early 1950s Sylvania established transistor and diode manufacturing at their tube (valve) facility in Emporium PA. Manufacturing was transferred to the Electronics Divsions in Woburn Mass. In 1957 it was divided into two new organizations, the Semiconductor Division and Special Tube Operations. Skyworks, one of the current world leaders in RF components for smartphones has its roots in Sylvania, Woburn.

The 2N109 was the first widely used 'hobbyist' RCA transistor and was used in AM receiver and preamplifier circuits. RCA originally established transistor development and manufacturing at Harrison NJ, then built a dedicated solid state operation at Somerville NJ in 1955.

Back in the day I knew about DSD (Direct Stream Digital) and SACD (Super Audio CD) but it passed me by. I was still in Burr-Brown when DSD data converter ICs were first being developed by the design team in Japan, and I'm sure I was present when they were being presented at seminars to customers, but at the time I had little or no interest in diving in personally. Burr-Brown invested heavily in designing ICs for the upcoming market demand, but as history tells us, it didn't become mainstream. Certainly not in the US, less so in Europe, but in Japan there was always demand. Philips and Sony originally developed SACD as the high end next generation of CD, and certainly the format was capable of encoding a significantly higher level of audio information on the platform. DSD was a delta-sigma bitstream format that sampled 1-bit at 2.8MHz. Philips Semiconductors (amongst others) developed an SACD processor and Burr-Brown (amongst others) developed DSD Digital to Analog converters. L...

The photo above shows a hybrid technology 12-bit D/A Converter from Burr-Brown Corporation. By 1986 this was replaced by a monolithic i.e. single chip design. Under the metal lid is a ceramic substrate based multi-chip module. See below for examples of the technology. DAC85 is the model number. The 1st C is the operating temp range (0 to 70C). CBI is complementary bipolar inputs and V is the voltage output version. 12-bit DACs from Burr-Brown were used primarily in industrial applications like automation and factory control. If you only know DACs for digital audio, then 12 bit may seem a low resolution, but parameters that were most important for high end industrial use would not be relevant for audio. These DACs were very precise.

Burr-Brown Research Corporation introduced the first solid state modular op amp in 1962. It was a circuit board based device with discrete transistors, resistors, capacitors etc in a fully tested potted module. The 1510 example potted module op amp in the image is date coded 1971.  Fairchild Semiconductor had introduced monolithic bipolar op amps in the 1960s but they were low performance.  There was no ability to trim parameters on-chip, but within the Burr-Brown modules it was possible.  It wasn't until the likes of Burr-Brown and Precision Monolithics developed on-chip thin film laser trimming that precision analog ICs were introduced. The Burr-Brown OPA134 OpAmp on top for size comparison is from 1996.